The patent covers a silicon solar cell formed on a highly-doped substrate with a two-layer epitaxially deposited emitter. Both layers of emitter have variable doping profile. The low-doped area adjacent to p-n-junction provides light absorbtion and the lighted highly-doped area is used to form contacts.
Substrate material can be mono- or multicrystalline silicon, both p- and n-type.
The solar cell design developed by Epiel provides for improved efficiency.
The patent covers a method of forming semiconductor structures of Silicon and/or Germanium by depositing semiconductor material on a substrate by mass transfer over a small gap from a solid source material, for instance Silicon wafer, in Hydrogen environment with minimum source gas flow or in still atmosphere.
The method provides for substantially decreased production cost and can be used to manufacture epitaxial wafers for Discrete device, Integrated circuit and Solar cell applications.