EPIwafers for ELectronics
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Patents

Patents

Patents

  • Patent RU 2360324 C1 "Silicon solar cell with Epitaxial emitter"
  • Patent RU 2393585 C1 "Method of making semiconductor structures"
  • Patent RU 2618279 C1 METHOD OF MANUFACTURING THE EPITAXIAL LAYER OF SILICON ON A DIELECTRIC SUBSTRATE
  • Patent RU RU2618598 C1 Measuring probe device and method for measuring electrophysical parameters of semiconductor wafers
  • Patent RU 2646070 C1 Method for producing heteroepitaxial silicon layer on dielectric
124460, 1-st Zapadny Proezd 12, bld.2, Zelenograd, Moscow, Russia (on map)
Phone/Fax: +7 (499) 995 0049
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