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Epiel participated in The 10th International Conference on Silicon Epitaxy and heterostructures on May 14-19th

Epiel participated in The 10th International Conference on Silicon Epitaxy and heterostructures on May 14-19th

  • 22.05.2017
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    The 10th International Conference on Silicon Epitaxy and heterostructures (ICSI-10) was held at The University of Warwick, Coventry, UK on 14-19th May 2017. ICSI is the prime international conference focusing on science, engineering, technologies and instrumentation of Silicon based epitaxy.

    The conference reflects the latest achievements in the Silicon based epitaxy and heterostructures and serves as an unique forum for scientists and engineers from both academia and industry to discuss future research directions and technological advancements.

    Epiel was participating in conference with two poster reports covering below topics:

    • - New approach to SOS wafer fabrication process (Report looks into the features of silicon-on-sapphire epitaxial growth technology)
    • - Atmospheric-pressure chloride vapor transport in sandwich system (Report describes Epiel's proprietary chloride vapor transport epitaxial technology in a wafer-wafer "sandwich" system)

    For more details about ICSI-10 please visit the conference website


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