EPIwafers for ELectronics
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The 2nd stage of government-funded Silicon on Sapphire (SOS) Epi R&D project successfully completed by Epiel and accepted by the customer

The 2nd stage of government-funded Silicon on Sapphire (SOS) Epi R&D project successfully completed by Epiel and accepted by the customer

  • 15.12.2010

    The project encompasses material research as well as equipment and process investigations with the ultimate goal to elaborate a production technology for a 150 mm SOS structure with ultra-thin Si Epi layer. The structure incorporates an ultra-thin layer of silicon on a highly insulating sapphire substrate.

    Applications of ultra-thin SOS Epi include high performance radio frequency CMOS integrated circuits used in mobile wireless devices.

    The project is to be completed by December 2011.

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