EPIwafers for ELectronics
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The 2nd stage of government-funded SiGe Epi R&D project successfully completed by Epiel and accepted by the customer

The 2nd stage of government-funded SiGe Epi R&D project successfully completed by Epiel and accepted by the customer

  • 17.12.2010

    The project encompasses material research as well as equipment and process investigations with the ultimate goal to elaborate a production technology for 200 mm SiGe Epitaxial wafers applied in 250-180 nm design node BiCMOS ICs.

    The project is to be completed by December 2011.

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